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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.12
1.08
Figure 8. On-Resistance Variation
vs. Temperature
2.8
2.4
2.0
1.04
1.6
1.00
1.2
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.96
0.92
-80
-40
*Notes:
1. V GS = 0V
2. I D = 250 μ A
0 40 80 120 160 200
o
0.8
0.4
-80
-40
*Notes:
1. V GS = 10V
2. I D = 27A
0 40 80 120 160 200
o
Figure 9. Maximum Safe Operating Area
300
Figure 10. Maximum Drain Current
vs. Case Temperature
30
100
10
10 μ s
100 μ s
25
20
V GS = 10V
1
Operation in This Area
is Limited by R DS(on)
1ms
10ms
15
10
1. T C = 25 C
2. T J = 175 C
R θ JC = 2.0 C/W
T C , Case Temperature [ C ]
0.1
0.01
1
*Notes: DC
o
o
3. Single Pulse
10 100
V DS , Drain-Source Voltage [V]
200
5
0
25
o
50 75 100 125 150
o
175
Figure 11. Eoss vs. Drain to Source Voltage
Figure 12. Unclamped Inductive
Switching Capability
1.2
1.0
0.8
12
10
If R = 0
t AV = (L) ( I AS ) / ( 1.3*RATED BV DSS -V DD )
If R = 0
t AV = (L/R)In [( I AS *R ) / ( 1.3*RATED BV DSS -V DD ) +1 ]
o
STARTING T J = 25 C
STARTING T J = 150 C
0.6
o
0.4
0.2
0.0
0
30 60 90 120
V DS , Drain to Source Voltage [ V ]
150
1
0.01
0.1 1
t AV , TIME IN AVALANCHE (ms)
10 20
?2011 Fairchild Semiconductor Corporation
FDB390N15A Rev. C1
4
www.fairchildsemi.com
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